-
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主な特徴
- Maximum junction temperature: TJ = 175 °C
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameter distribution
- Co-packed diode for protection
- Safe paralleling
- Low thermal resistance
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT20HP65FB | TO-3P | Tube | Active | - | - | EAR99 | KOREA (south) | Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | 在庫チェック | サンプル入手 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT20HP65FB | Active | Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | TO-3P | インダストリアル | Ecopack1 | |
STGWT20HP65FB
Package:
Trench gate field-stop IGBT, HB series 650 V, 20 A high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
