Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package

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  • This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    主な特徴

    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

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Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
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STH290N4F6-6AG H2PAK-6 Tape And Reel
Active
- EAR99 CHINA No availability of distributors reported, please contact our sales office Buy now

STH290N4F6-6AG

パッケージ

H2PAK-6

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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    • 製品型番

      MOSFET product finder application for Android and iOS

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技術文書

    • Description バージョン サイズ アクション
      DS11099
      Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
      1.0
      474.13 KB
      PDF
      DS11099

      Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages

    • Description バージョン サイズ アクション
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description バージョン サイズ アクション
      STH290N4F6-6AG PSpice model 1.0
      9.71 KB
      ZIP

      STH290N4F6-6AG PSpice model

Publications and Collaterals

    • Description バージョン サイズ アクション
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      714.06 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.1
      687.95 KB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STH290N4F6-6AG
Active
H2PAK-6 オートモーティブ Ecopack1

STH290N4F6-6AG

Package:

H2PAK-6

Material Declaration**:

Marketing Status

Active

Package

H2PAK-6

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.