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These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
主な特徴
- Among the lowest RDS(on)on the market
- Excellent figure of merit (FoM)
- Low Crss/Cissratio for EMI immunity
- High avalanche ruggedness
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STI45N10F7 | I2PAK | Tube | Active | 1.2 | 1000 | EAR99 | CHINA | 在庫チェック | サンプル入手 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STI45N10F7 | Active | I2PAK | インダストリアル | Ecopack2 | |
STI45N10F7
Package:
I2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
