These devices are high voltage fast-switching NPN power transistors. They are manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability.
They use a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are designed for use in lighting applications and low cost switch-mode power supplies.
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
- Integrated antiparallel collector-emitter diode
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