STL12N10F7

生産終了
Design Win

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

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製品概要

概要

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • 特徴

    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

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STMicroelectronics - STL12N10F7

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