This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.
- Very low on-resistance
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power loss
Recommended for you
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.