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This high voltage N-channel Power MOSFET belongs to the MDmesh™ M8 series, based on the new ST trench super-junction technology. The resulting Power MOSFET exhibits very low RDS(on) x area, low gate charge (Qg) and low gate resistance (RG), making it suitable for the most demanding high efficiency converters.
Key Features
- Very low RDS(on) x area
- Extremely low gate charge and input capacitance
- Low gate resistance (RG)
- 100% avalanche tested
- High dv/dt ruggedness
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STL26N30M8 | PowerFLAT 5x6 | Tape And Reel |
アクティブ
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- | - | EAR99 | - | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
STL26N30M8
パッケージ
PowerFLAT 5x6梱包タイプ
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STL26N30M8 |
アクティブ
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PowerFLAT 5x6 | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
