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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    主な特徴

    • Designed for automotive applications and AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

サンプル & 購入

製品型番
パッケージ
Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STP410N4F7AG TO-220AB Tube
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STP410N4F7AG

パッケージ

TO-220AB

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

開発ツール・ハードウェア

    • 製品型番

      MOSFET product finder application for Android and iOS

00 Files selected for download

技術文書

    • Description バージョン サイズ アクション
      DS11667
      Automotive-grade N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package
      1.0
      671.17 KB
      PDF
      DS11667

      Automotive-grade N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package

    • Description バージョン サイズ アクション
      AN1506
      A motor drives system for wheelchair applications
      1.2
      139.23 KB
      PDF
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4192
      Power MOSFETs: best choice guide for VRM application
      1.0
      4.8 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN1506

      A motor drives system for wheelchair applications

      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4192

      Power MOSFETs: best choice guide for VRM application

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description バージョン サイズ アクション
      パワー・マネージメントガイド 2017 09.2018
      2.64 MB
      PDF

      パワー・マネージメントガイド 2017

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STP410N4F7AG
Active
TO-220AB オートモーティブ Ecopack1

STP410N4F7AG

Package:

TO-220AB

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-220AB

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.