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These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
主な特徴
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STP7NM80 | TO-220AB | Tube |
NRND
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- | EAR99 | - | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 Part number 製造元 Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | Marketing Status | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STP7NM80 |
NRND
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TO-220AB | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
