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These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
主な特徴
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
サンプル & 購入
製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格(USS) | Quantity | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
---|---|---|---|---|---|---|---|---|---|
STP7NM80 | TO-220AB | Tube | NRND | - | - | EAR99 | - | 在庫チェック |
STP7NM80
パッケージ
TO-220AB梱包タイプ
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール・ハードウェア
製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
---|---|---|---|---|---|
STP7NM80 | NRND | TO-220AB | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.