These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Product Specifications (1)
|Resource title||Latest update|
|22 Aug 2018||
22 Aug 2018
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP7NM80
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