製品概要
概要
The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
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特徴
- The worldwide best RDS(on)* area amongst the fast recovery diode devices
- Low input capacitance and gate charge
- 100% avalanche tested
- Extremely high dv/dt and avalanche capabilities
- Low gate input resistance
注目ビデオ
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STP8NM60ND
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すべてのリソース
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SPICE models (1)
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| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
