パンフレット
ユーザ･マニュアル
Conference Paper
- 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
- Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis
- Cost benefits of a SiC MOSFET-based high frequency converter
- Design rules for paralleling of Silicon Carbide Power MOSFETs
- SiC and Silicon MOSFET solution for high frequency DC-AC converters
技術ノート
アプリケーション･ノート
データシート
- Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
- Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
- Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
- Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
- Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package