STPOWER SiC MOSFET: 製品

SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTH100N120G2-AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCT015W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
SCTH40N120G2V-7
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
SCT018H65G3AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
SCTH60N120G2-7
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
SCTWA60N12G2-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
SCTWA40N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
SCTW60N120G2
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
SCTWA40N12G24AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
SCTWA60N120G2-4
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
SCTWA60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
SCT070W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT070HU120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
SCT070H120G3AG
1200V、63mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをH2PAK-7パッケージで提供
SCT025H120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
SCT040W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCTWA70N120G2V
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package
SCT1000N170
Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SCT012H90G3AG
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SCT040H120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
SCT012W90G3AG
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
SCT025W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
SCTHS250N65G3
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 207 A in a STPAK package
SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
SCTHS250N65G2G
Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package
SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
SCTWA40N120G2V-4
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
SCT055H65G3AG
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
SCTL90N65G2V
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
SCTWA70N120G2V-4
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
SCTWA40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTWA90N65G2V-4
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
SCT055HU65G3AG
650V、58mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをHU3PAKパッケージで提供
SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT30N120H
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
SCTW40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT011H75G3AG
750V、11.4mΩ（Typ.）、110Aの車載用SiCパワーMOSFETをH2PAK-7パッケージで提供
SCTHS300N75G3AG
Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
SCT020H120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
SCTHS200N120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package
SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
SCTH70N120G2V-7
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
SCT060HU75G3AG
Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package
SCT040W120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
SCT20N170
Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
SCT040HU65G3AG
650V、40mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをHU3PAKパッケージで提供
SCT040H65G3SAG
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package
SCT040H65G3AG
650V、40mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをH²PAK-7パッケージで提供
SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTWA35N65G2V4AG
Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
SCTL35N65G2V
PowerFLAT 8 x 8 HVパッケージで提供される650V、55mΩ（Typ.）、40AのSiCパワーMOSFET
SCTWA35N65G2V-4
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package

STPOWER SiC MOSFET: 製品

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