This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.
- Conduction losses reduced
- Switching losses reduced
- Low threshold drive
- Standard outline for easy automated surface mount assembly
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