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  • These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

    主な特徴

    • Extremely low gate charge
    • Excellent output capacitance (Coss)profile
    • 100% avalanche tested
    • Zener-protected

サンプル & 購入

製品型番
パッケージ
梱包タイプ
製品ステータス
概算価格(USS)
数量
ECCN (US)
Country of Origin
販売代理店からオーダー
STからオーダー
STU6N60M2 IPAK Tube
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STU6N60M2

パッケージ

IPAK

梱包タイプ

Tube

Unit Price (US$)

*

製品ステータス

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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開発ツール・ハードウェア

    • 製品型番

      MOSFET product finder application for Android and iOS

00 ファイルがダウンロード用に選択されています

技術文書

    • 概要 バージョン サイズ アクション
      DS9734
      N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
      2.0
      1.08 MB
      PDF
      DS9734

      N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

    • 概要 バージョン サイズ アクション
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 概要 バージョン サイズ アクション
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 概要 バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • 概要 バージョン サイズ アクション
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
      PDF
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      671.31 KB
      PDF

      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

    • 概要 バージョン サイズ アクション
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製品型番 製品ステータス パッケージ グレード RoHSコンプライアンスグレード 材料宣誓書**
STU6N60M2
Active
IPAK インダストリアル Ecopack2

STU6N60M2

Package:

IPAK

Material Declaration**:

Marketing Status

Active

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.