This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
- RDS(on)*Qgindustry’s benchmark
- Conduction losses reduced
- Low profile, very low parasitic inductance
- Switching losses reduced
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