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  • The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

    主な特徴

    • Excellent thermal stability
    • POUT = 60W with 13dB gain @ 945MHz
    • Common source configuration
    • In compliance with the 2002/95/EC european directive
    • BeO free package

推奨コンテンツ

00 ファイルがダウンロード用に選択されています

技術文書

    • 概要 Version Size Action
      DS1753
      RF power transistor the LdmoST family
      7.2
      395.18 KB
      PDF
      DS1753

      RF power transistor the LdmoST family

HWモデル、CADライブラリ & SVD

    • 概要 Version Size Action
      SD57060 ADS model 1.0
      490.3 KB
      ZIP

      SD57060 ADS model

関連資料

    • 概要 Version Size Action
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      182.79 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      187.81 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness

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