非对称半桥PWM驱动器

主要特性

• ~150 W drive capability (50 V - 3.0 A_r.m.s. )
• Very low area occupation, all devices and power switches in SMD package (no heatsink)
• Fast-decay or slow-decay on-board constant off-time peak current control
• PWM voltage mode control with overcurrent protection possible via external logic signals
• Driver supply voltage on-board generation directly from BUS voltage
• Carefully optimized layout

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主要特性

• High voltage rail up to 600 V
• dV/dt immunity: 50 V/ns in full temperature range
• Driver current capability: 4 A source/sink
• Comparator for fault protections
• Smart shutdown function
• Integrated bootstrap diode
• Adjustable deadtime
• Interlocking function
• Switching times 15 ns rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Compact and simplified layout
• Bill of material reduction
• Effective fault protection
• Flexible, easy and fast design

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主要特性

• High voltage rail up to 1500 V
• 5 A sink/source driver current capability
• 5 A active Miller clamp
• Gate driving voltage up to 36 V
• Negative gate driving ability
• Desaturation detection
• Overcurrent protection
• Output 2-level turn-off (2LTO) UVLO on each supply voltage
• Overtemperature warning and shut-down protection
• 3.3/5 V logic input interface
• Optimized reference layout
• SPI with daisy chain feature for parameters programming and diagnostic
• Suitable to be used in combination with STEVAL-PCC009V2 and configuration GUI
• Fault LED indicators
• RoHS compliant

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主要特性

• Driver current capability: 2 A source, 2.5 A sink
• Integrated bootstrap diode
• Interlocking function
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• UVLO on both high-side and low-side sections
• dV/dt immunity: 50 V/ns in full temperature range
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

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主要特性

• Driver current capability: 2 A source, 2.5 A sink
• Integrated bootstrap diode
• Single input and shutdown pin
• Adjustable deadtime
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• UVLO on both high-side and low-side sections
• dV/dt immunity: 50 V/ns in full temperature range
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

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主要特性

• Half-bridge configuration
• High voltage rail up to 600 V
• Includes samples of each compatible gate driver in SO8 package
  • L6385E, L6387E, L6388E, L6389E,
  • L6395, L6398, L6399
• Compatible with MOSFETs/IGBTs in
  • DPAK, D2PAK, TO-220, TO-220FP
• dV/dt transient immunity ± 50 V/ns in full temperature range
• Integrated bootstrap diode
• Dedicated high- and low-side driving inputs
• Compact and simplified layout
• Gate drivers in the kit features different functionalities and characteristics
  • UVLO on both - high-side and low-side
  • Internal deadtime, or no deadtime
  • Interlocking for anti cross-conduction protection
  • Ability to drive asymmetrical half-bridges and switched reluctance motors
  • Active high or active low LIN for single input gate driving

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