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Power Factor Correction is a technique of shaping input current to be as sinusoidal as possible to reduce harmonic distortion and associated losses and in-phase with input voltage in an AC circuit to have a power factor close to one.

Placed as a front end in relatively high-power switch mode power supplies (SMPS), a three-phase power factor corrector is designed with a number of different topologies to meet specific requirements. An interleaving architecture with two or more small interleaved stages is also useful to help achieve higher power densities. Or to further enhance efficiency of the combined PFC and rectifier front-end, bridgeless topologies have emerged that can help reduce conduction loss by minimizing the number of semiconductor switches in the line-current path. For high-power systems with higher current, both Continuous Conduction Mode (CCM) and Transition mode (TM) operations are required and a new patented approach with fixed off-time (FOT) operation can provide great advantages.

ST's extended offer of advanced PFC digital controllers and high-performance STM32 microcontrollers support interleaved and bridgeless topologies.  To help design robust and high-efficient PFC stages, these devices embed all the required protection features including output overvoltage, brown-out, feedback disconnection and boost inductor saturation.

Developers will also appreciate our power MOSFETs and rectifiers including silicon-carbide (SiC) galvanically isolated gate drivers and a range of hardware and software evaluation and development tools.

pfc converter three phase input circuit diagram
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技术文档

    • 描述 版本 文档大小 操作
      AN4606
      Inrush-current limiter circuits (ICL) with Triacs and Thyristors (SCR) and controlled bridge design tips
      2.2
      1,008.92 KB
      PDF
      AN4606

      Inrush-current limiter circuits (ICL) with Triacs and Thyristors (SCR) and controlled bridge design tips

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages 1.0
      748.77 KB
      PDF
      Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters 2.0
      958.23 KB
      PDF
      ST Diodes Finder : the new app for Android and iOS 2.0
      1.46 MB
      PDF

      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages

      Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters

      ST Diodes Finder : the new app for Android and iOS

    • 描述 版本 文档大小 操作
      Digital Controller Eases Design Of Interleaved PFC For Multi-kilowatt Converters by Rosario Attanasio, Giuseppe Di Caro, Sebastiano Messina, and Marco Torrisi, STMicroelectronics, Schaumburg, Ill and Catania, Italy 1.0
      1.96 MB
      PDF

      Digital Controller Eases Design Of Interleaved PFC For Multi-kilowatt Converters by Rosario Attanasio, Giuseppe Di Caro, Sebastiano Messina, and Marco Torrisi, STMicroelectronics, Schaumburg, Ill and Catania, Italy

Diodes and Rectifiers

Part number 描述
STPSC16H065A 650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
STPSC5H12 1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
STTH112 1200 V, 1A Ultrafast Diode
STTH15RQ06 600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode
Part number
650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
1200 V, 1A Ultrafast Diode
600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode

电源管理

Part number 描述
PM8834 4 A dual low side MOSFET driver
STGAP1AS Automotive galvanically isolated single gate driver
Part number
4 A dual low side MOSFET driver
Automotive galvanically isolated single gate driver

Power Transistors

Part number 描述
SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
STB38N65M5 N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
STF24N60M2 N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
Part number
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package