In a two-transistor forward or asymmetrical half bridge forward topology, the two transistors of the primary are switched on and power is transferred to the secondary winding of the transformer and then to the output capacitor and the load. When switched off, the diodes in the primary clamp the peak voltages seen by the transistors at the input voltage and thus reduce stress at the same time.
The two-transistor forward topology is often used in server and telecom switch mode power supplies (SMPS) as a main stage DC-DC converter and in arc-welding equipment.
To help developers fully exploit the benefits of two-transistors forward converters, ST offers a range of power MOSFETs and rectifiers; high-voltage and galvanically isolated gate drivers; primary PWM and synchronous rectification controllers; as well as high-performance STM32 microcontrollers – with an extended range of dedicated peripherals including high-resolution PWM timers and high-speed ADCs – together with our hardware and software evaluation and development tools as well as reference designs.
Diodes and Rectifiers
|FERD20U60DJFD||60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)|
|FERD40H100S||100 V, 40 A Field-Effect Rectifier Diode (FERD)|
|STPS10150C||150 V, 10 A dual Power Schottky Rectifier|
|STPSC16H065A||650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode|
|STPSC5H12||1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode|
|STTH3002C||200 V, 30 A dual Ultrafast Diode|
|STB5N80K5||N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package|
|STF140N6F7||N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package|
|STF24N60M2||N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package|
|STGP20V60F||Trench gate field-stop IGBT, V series 600 V, 20 A very high speed|
|STGW60H65FB||Trench gate field-stop IGBT, HB series 650 V, 60 A high speed|
|STGWA15H120DF2||Trench gate field-stop IGBT, H series 1200 V, 15 A high speed|
|STH140N8F7-2||N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package|
|STP40N60M2||N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package|