STPOWER SiC MOSFET是面向更紧凑和高效设计的创新型解决方案,而意法半导体正将新型宽带隙材料的优势扩展到大批量生产中。可从广泛的电压范围(650V、1200V和1700V)装置进行选择。STPOWER SiC MOSFET具有非常低的导通电阻RDS(on),适用于不同的汽车和工业应用。STPOWER SiC MOSFET是合格的汽车级器件,符合AEC-Q101要求。
主要特性:
- 超高温处理能力(max.TJ = 200 °C)
- 显著降低开关损耗(随温度的变化降至最低)
- 低导通状态电阻
- 易于驱动
- 稳定的超快速本体
特别推荐
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- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT011H75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
- SCT1000N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT040HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package
- SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
- SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
- SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package