STPOWER SiC MOSFET是面向更紧凑和高效设计的创新型解决方案，而意法半导体正将新型宽带隙材料的优势扩展到大批量生产中。可从广泛的电压范围（650V、1200V和1700V）装置进行选择。STPOWER SiC MOSFET具有非常低的导通电阻RDS(on)，适用于不同的汽车和工业应用。STPOWER SiC MOSFET是合格的汽车级器件，符合AEC-Q101要求。
主要特性：
- 超高温处理能力（max.TJ = 200 °C）
- 显著降低开关损耗（随温度的变化降至最低）
- 低导通状态电阻
- 易于驱动
- 稳定的超快速本体
特别推荐
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- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
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- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
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- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package
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- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT040HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package
- SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
- SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
- SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package