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The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
主要特性
- ESD protection
- Logic level input threshold
- High noise immunity
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Schmitt trigger on input
- Integrated clamp
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| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|
| VND10N06-1-E | NRND | IPAK | 汽车 | Ecopack1 | |
| VND10N06-E | 批量生产 | DPAK | 汽车 | Ecopack1 | |
| VND10N06TR-E | 批量生产 | DPAK | 汽车 | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
