产品概述
描述
The VND5N07-E is a monolithic device designed using STMicroelectronics®VIPower®M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
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所有功能
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power mosfet (analog driving)
- Compatible with standard Power MOSFET
EDA符号、封装和3D模型
STMicroelectronics - VND5N07-E
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| VND5N07-E | 批量生产 | DPAK | 汽车应用 | Ecopack1 | |
| VND5N07TR-E | 批量生产 | DPAK | 汽车应用 | Ecopack1 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| VND5N07TR-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 | DPAK | Tape and Reel | CHINA | EAR99 | NEC | - | - | - | |||
| VND5N07-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 | DPAK | Tube | CHINA | EAR99 | NEC | - | - | - | |||
VND5N07TR-E 批量生产
VND5N07-E 批量生产