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  • The VNP8T is a monolithic device designed in STMicroelectronics®VIPower®M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.

    Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
    Fault feedback can be detected by monitoring the voltage at the input pin.

    主要特性

    • Linear current limitation
    • Thermal shutdown
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFETs

样片和购买

产品型号
封装
包装类型
Operating Temperature (°C) (min)
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
VNP8TD8 DICE SAWN T&R Tape And Reel -
批量生产
- - EAR99 CHINA 没有经销商,请联系我们的销售办事处

VNP8TD8

封装

DICE SAWN T&R

包装类型

Tape And Reel

单价(US$)

*

Operating Temperature (°C)

(min)

-

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
VNP8TD8
批量生产
DICE SAWN T&R 汽车 N/A

VNP8TD8

Package:

DICE SAWN T&R

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

DICE SAWN T&R

Grade

Automotive

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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