产品概述
描述
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
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所有功能
- In compliance with the 2002/95/EC european directive
- Compatible with standard power mosfet
- ESD protection
- Diagnostic feedback through input pin
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Direct access to the gate of the power mosfet (analog driving)
- Integrated clamp
电路原理图
EDA符号、封装和3D模型
STMicroelectronics - VNS1NV04DP-E
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符号
封装
3D模型
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| VNS1NV04DPTR-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 | SO-8 | Tape and Reel | MOROCCO | EAR99 | NEC | - | - | - | |||
VNS1NV04DPTR-E 批量生产