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The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.主要特性
- ESD protection
- Diagnostic feedback through input pin
- Compatible with standard Power MOSFET
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Direct access to the gate of the Power MOSFET (analog driving)
- Integrated clamp
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Electro-thermal simulator for devices in ViPower technology
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产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 07 Oct 2020 |
07 Oct 2020
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选型指南 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 Oct 2020 |
08 Oct 2020
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CAD/EDA Symbols, Footprints and Models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| VNS1NV04PTR-E | 9 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | SO-8 | - | - | CHINA | 0.422 / 1k | |
