产品概述
描述
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring voltage at the input pin
-
所有功能
- AEC-Q100 qualified
- ECOPACK: lead free and RoHS compliant
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFET
EDA符号、封装和3D模型
样片和购买
产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度(ºC) | Operating Temperature (°C) (min) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | |||||||||||||
VNS3NV04DPTR-E | | | distributors 无法联系到经销商,请联系我们的销售办事处 | SO-8 | Tape and Reel | MOROCCO | EAR99 | NEC | - | - | - |
VNS3NV04DPTR-E 批量生产