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  • The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

    Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

    主要特性

    • Linear current limitation
    • Thermal shutdown
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFET

样片和购买

产品型号
封装
包装类型
Operating Temperature (°C) (min)
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
VNV35NV04-E PowerSO-10 Tube -
预览
- - EAR99 - 没有经销商,请联系我们的销售办事处

VNV35NV04-E

封装

PowerSO-10

包装类型

Tube

单价(US$)

*

Operating Temperature (°C)

(min)

-

供货状态

预览

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

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      DS9212
      OMNIFET II: fully autoprotected Power MOSFET
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      555.46 KB
      PDF
      DS9212

      OMNIFET II: fully autoprotected Power MOSFET

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      Smart power solutions for car body applications 4.0
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      PDF

      Smart power solutions for car body applications

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
VNV35NV04-E
预览
PowerSO-10 汽车 Ecopack1

VNV35NV04-E

Package:

PowerSO-10

Material Declaration**:

Marketing Status

预览

Package

PowerSO-10

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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