除了确保符合当今最严格的能效法规（Energy Star、80Plus、以及European Efficiency）外，意法半导体的碳化硅二极管的动态特性是标准硅二极管的四倍，而正向电压（VF）比其低15%。
碳化硅二极管属于我们的STPOWER™系列产品。
碳化硅（SiC）二极管的使用大大提高了太阳能逆变器、电机驱动、不间断电源和电动车电路的效率和稳定性。
意法半导体提议在600V到1200V的电压范围内采用单二极管和双二极管（封装尺寸从DPAK到TO-247），包括陶瓷绝缘型TO-220，以及超薄的紧凑型PowerFLATTM 8x8，它具有优异的热性能，是高电压（HV）表面贴装（SMD）封装的新标准，可用于650 V碳化硅二极管（4 A - 10 A）。
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SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages
To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 10 A range (STPSC4H065DLF, STPSC6H065DLF, STPSC8H065DLF, STPSC10H065DLF and STPSC10065DLF) with super-power density.
- Package less than 1 mm thick
- Forward voltage (VF) improved by 200 mV
- High-voltage creepage: 2.75 mm
- Designed and built for high inrush current (IFSM)
- Rth thermal resistance as low as 1.7°C/W
- STPSC6H065DLF 6 A, 650 V SiC Power Schottky Diode
- STPSC4H065DLF 4 A, 650 V SiC Power Schottky Diode
- STPSC16H065A 650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
- STPSC5H12 1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
- STPSC10H12 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode
- STPSC2H12 1200 V power Schottky silicon carbide diode
- STPSC10H12C 1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
- STPSC10065DLF 650 V 10 A power Schottky silicon carbide diode
- STPSC10H065DLF 650 V 10 A power Schottky silicon carbide diode
- STPSC12065 650 V power Schottky silicon carbide diode
- STPSC20065 650 V power Schottky silicon carbide diode
- STPSC16H065C 650 V power Schottky silicon carbide diode
- STPSC12H065C 650 V, 12 A dual High Surge Silicon Carbide Power Schottky Diode
- STPSC6TH13TI 2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode
- STPSC2H065 650 V, 2 A High Surge Silicon Carbide Power Schottky Diode
- STPSC8H065C 650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode
- STPSC8065 650 V power Schottky silicon carbide diode
- STPSC15H12 1200 V, 15 A High Surge Silicon Carbide Power Schottky Diode
- STPSC40065C 650 V power Schottky silicon-carbide diode
- STPSC2006CW 600 V power Schottky silicon-carbide diode
- STPSC30H12C 1200 V power Schottky silicon carbide diode
- STPSC20H12C 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
- STPSC40H12C 1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode
- STPSC10065 650 V power Schottky silicon carbide diode
- STPSC20H12 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
- STPSC6H065 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
- STPSC20065C 650 V, dual 10 A, power Schottky silicon carbide diode
- STPSC8H065DLF 8 A 650 V SiC Power Schottky Diode
- STPSC8TH13TI 2 x 650V tandem, 8 A High Surge Silicon Carbide Power Schottky Diode
- STPSC20H065C 650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode
- STPSC10H065 650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
- STPSC10TH13TI 2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode
- STPSC8H065 650 V, 8 A High surge Silicon Carbide Power Schottky Diode
- STPSC6H12 1200 V, 6 A High Surge Silicon Carbide Power Schottky Diode
- STPSC4H065 650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
- STPSC12H065 650 V, 12 A High Surge Silicon Carbide Power Schottky Diode
