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除了确保符合当今最严格的能效法规(Energy Star、80Plus、以及European Efficiency)外,意法半导体的碳化硅二极管的动态特性是标准硅二极管的四倍,而正向电压(VF)比其低15%。 
碳化硅二极管属于我们的STPOWER™系列产品。 

碳化硅(SiC)二极管的使用大大提高了太阳能逆变器、电机驱动、不间断电源和电动车电路的效率和稳定性。

意法半导体提议在600V到1200V的电压范围内采用单二极管和双二极管(封装尺寸从DPAK到TO-247),包括陶瓷绝缘型TO-220,以及超薄的紧凑型PowerFLATTM 8x8,它具有优异的热性能,是高电压(HV)表面贴装(SMD)封装的新标准,可用于650 V碳化硅二极管(4 A - 10 A)。

  

SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages

To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 10 A range (STPSC4H065DLFSTPSC6H065DLFSTPSC8H065DLF, STPSC10H065DLF and STPSC10065DLF) with super-power density.

  • Package less than 1 mm thick
  • Forward voltage (VF) improved by 200 mV
  • High-voltage creepage: 2.75 mm
  • Designed and built for high inrush current (IFSM)
  • Rth thermal resistance as low as 1.7°C/W

 

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二极管(功率肖特基和场效应整流)产品选择器