产品概述
描述
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.-
所有功能
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- ECOPACK®2 compliant component
精选 视频
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EDA符号、封装和3D模型
STMicroelectronics - STPSC10C065-Y
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符号
封装
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全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 24 Apr 2020 |
24 Apr 2020
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STPSC10C065RY | 2 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | I2PAK | - | - | 175 | CHINA | 1.478 / 100 | ||
