STPSC10C065-Y

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产品概述

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The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.

所有功能
AEC-Q101 qualified

No reverse recovery charge in application current range

Switching behavior independent of temperature

Recommended to PFC applications

PPAP capable

ECOPACK^®2 compliant component
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

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