Product overview
描述
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.-
All features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 compliant
精选 视频
All tools & software
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简报 (1)
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选型指南 (1)
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手册 (2)
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EDA Symbols, Footprints and 3D Models
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硬件型号、CAD库及SVD (1)
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ZIP | 14 Dec 2020 |
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
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最小值 | 最大值 | |||||||||||||
STPSC20H12CWL | 1 distributors |
批量生产
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EAR99 | NEC | Tube | TO-247 long leads | - | - | 175 | PHILIPPINES | 4.702 / 100 |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
4.702 / 100