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The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
主要特性
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 compliant
样片和购买
| 产品型号 | 供货状态 | 预算价格(US$) | 数量 | 封装 | 包装类型 | Junction Temperature (°C) (max) | ECCN (US) | Country of Origin | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|---|
| STPSC20H12CWL |
Active
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8.0661 | 10 | TO-247 long leads | Tube | 175 | EAR99 | PHILIPPINES | 查看供货情况 | 立即购买 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
