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The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
主要特性
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 compliant
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图片 产品型号 制造商 描述 
ST Diode Finder ST 用于安卓和iOS的二极管产品查找应用 产品型号用于安卓和iOS的二极管产品查找应用
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STPSC20H12CWL | 3 distributors | 立即购买 |
批量生产
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EAR99 | NEC | Tube | TO-247 long leads | - | - | 175 | PHILIPPINES | 4.702 / 100 | ||
