产品概述
描述
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
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所有功能
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 compliant
EDA符号、封装和3D模型
STMicroelectronics - STPSC20H12CWY
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | Latest update |
|---|
SPICE models (1)
| 资源标题 | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 12 Jan 2021 | 12 Jan 2021 |
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | Junction Temperature (°C) (max) | Country of Origin | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STPSC20H12CWY | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | HIP247 | -40 | 175 | 175 | CHINA | | 175 | CHINA | ||