产品概述
描述
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions.
-
所有功能
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK2 compliant component
- Power efficient product
EDA符号、封装和3D模型
STMicroelectronics - STPSC2H065
为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。
符号
封装
3D模型
全部资源
| 资源标题 | 版本 | Latest update |
|---|
SPICE models (1)
| 资源标题 | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 10.0 | 05 May 2023 | 05 May 2023 |
样片和购买
Don't show this again
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | Junction Temperature (°C) (max) | Country of Origin | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STPSC2H065B-TR | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | DPAK | - | - | 175 | CHINA | | 175 | CHINA | ||
distributors
无法联系到经销商，请联系我们的销售办事处
Don't show this again