产品概述
描述
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
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所有功能
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -55 °C to 175 °C
- Avalanche energy rated
- ECOPACK2 compliant component
EDA符号、封装和3D模型
全部资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 10.0 | 05 May 2023 | 05 May 2023 |
质量与可靠性
产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|
STPSC30G12 | 建议 | - | 工业 | - | |
STPSC30G12WL | 批量生产 | DO247 LONG LEADS | 工业 | Ecopack2 | |
STPSC30G12
Package:
-Material Declaration**:
STPSC30G12WL
Package:
DO247 LONG LEADSMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
样片和购买
产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度(ºC) | Junction Temperature (°C) (max) | Operating Temperature (°C) (min) | Junction Temperature (°C) (max) | ||
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最小值 | 最大值 | |||||||||||||||
STPSC30G12 | | | distributors 无法联系到经销商,请联系我们的销售办事处 | - | - | - | - | - | - | - | 175 | - | 175 | |||
STPSC30G12WL | | | distributors 无法联系到经销商,请联系我们的销售办事处 | DO247 LONG LEADS | Tube | CHINA | EAR99 | NEC | - | - | 175 | - | 175 |
STPSC30G12 建议
STPSC30G12WL 批量生产