产品概述
描述
This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.
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所有功能
- Less than 1 mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Low drop forward voltage
- Power efficient product
- ECOPACK2 compliant component
EDA符号、封装和3D模型
STMicroelectronics - STPSC4H065DLF
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 10.0 | 05 May 2023 | 05 May 2023 |
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Junction Temperature (°C) (max) | Operating Temperature (°C) (min) | Junction Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||||
| STPSC4H065DLF | | | distributors 无法联系到经销商，请联系我们的销售办事处 | POWER FLAT MLPD 8X8 4L MIXPLANT | Tape and Reel | CHINA | EAR99 | NEC | - | - | 175 | - | 175 | |||
STPSC4H065DLF 批量生产