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This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.
主要特性
- Less-than-1mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Low drop forward voltage
- Power efficient product
- ECOPACK®2 compliant component
样片和购买
| 产品型号 | 供货状态 | 预算价格(US$) | 数量 | 封装 | 包装类型 | Junction Temperature (°C) (max) | ECCN (US) | Country of Origin | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|---|
| STPSC4H065DLF |
Active
|
0.9015 | 10 | PowerFLAT 8x8 HV | Tape And Reel | 175 | EAR99 | CHINA | 查看供货情况 | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
