产品概述
描述
This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.-
所有功能
- Less than 1 mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Low drop forward voltage
- Power efficient product
- ECOPACK2 compliant component
精选 视频
Getting started with Schottky and FERD eTool video
All tools & software
EDA符号、封装和3D模型
STMicroelectronics - STPSC4H065DLF
为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。
符号
封装
3D模型
全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 8.0 | 14 Dec 2020 |
14 Dec 2020
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STPSC4H065DLF | 3 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | PowerFLAT 8x8 HV | - | - | 175 | CHINA | 0.845 / 100 | ||
