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This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.
主要特性
- Less-than-1mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Low drop forward voltage
- Power efficient product
- ECOPACK®2 compliant component
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| ZIP | 03 Dec 2019 |
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
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| 最小值 | 最大值 | |||||||||||||
| STPSC4H065DLF | 7 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | PowerFLAT 8x8 HV | - | - | 175 | CHINA | 0.78 / 100 | ||
