STPSC4H065DLF

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产品概述

描述

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.

所有功能
Less than 1 mm height package

High creepage package

No or negligible reverse recovery

Temperature independent switching behavior

High forward surge capability

Low drop forward voltage

Power efficient product

ECOPACK2 compliant component
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

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SPICE models (1)

	Resource title	版本	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0