产品概述

描述

该款碳化硅（SiC）二极管可采用TO-220AC和DPAK HV封装，是一款超高性能的功率肖特基二极管，并使用碳化硅基板制造。宽带隙材料可用于设计1200 V额定电压的低V_F（正向压降）肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。 ST碳化硅（SiC）二极管特别适用于PFC和二次侧应用，可在硬开关条件下大幅提升效能。这款二极管将增强目标应用的性能。其高耐正向浪涌电流能力可确保在瞬态期间提供良好的耐受性。

所有功能
无反向恢复，或反向恢复可忽略

开关行为受温度影响小

强大的高电压外设

工作结温，范围从-40 °C 到 175 °C

低V_F（正向压降）

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	Resource title	版本	Latest update

SPICE models (1)

	Resource title	版本	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0