产品概述
描述
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions.
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所有功能
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- ECOPACK®2 compliant component
EDA符号、封装和3D模型
全部资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 1.0 | 06 Dec 2019 | 06 Dec 2019 |
样片和购买
产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度(ºC) | Junction Temperature (°C) (max) | Operating Temperature (°C) (min) | Junction Temperature (°C) (max) | ||
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最小值 | 最大值 | |||||||||||||||
STPSC6H065BY-TR | | | distributors 无法联系到经销商,请联系我们的销售办事处 | DPAK | Tape and Reel | CHINA | EAR99 | NEC | -40 | 175 | 175 | -40 | 175 |
STPSC6H065BY-TR 批量生产