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ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.
This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.
主要特性
- Insulated voltage: 1500 VRMS
- Ultrafast recovery
- Reduces losses in diode and switching transistor
- Low reverse recovery current
- Higher frequency operation
- Low thermal resistance
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产品规格 (1)
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选型指南 (1)
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手册 (2)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STTH12S06
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
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硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 03 Dec 2019 |
03 Dec 2019
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质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STTH12S06FP |
批量生产
|
TO-220FPAC | 工业 | Ecopack2 |
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STTH12S06FP
Package:
TO-220FPACMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STTH12S06FP | 2 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-220FPAC | - | - | 175 | CHINA | 0.365 / 500 | ||
