产品概述
描述
ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.
This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.
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所有功能
- Insulated voltage: 1500 VRMS
- Ultrafast recovery
- Reduces losses in diode and switching transistor
- Low reverse recovery current
- Higher frequency operation
- Low thermal resistance
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EDA符号、封装和3D模型
STMicroelectronics - STTH12S06
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符号
封装
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全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 10.0 | 29 Apr 2022 | 29 Apr 2022 |
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STTH12S06FP | 批量生产 | TO-220FPAC | 工业 | Ecopack2 | |
STTH12S06FP
Package:
TO-220FPACMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | Junction Temperature (°C) (max) | Country of Origin | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STTH12S06FP | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO-220FPAC | - | - | 175 | CHINA | | 175 | CHINA | ||
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