EVSTGAP2GS

批量生产
Design Win

Demonstration board for STGAP2GS galvanically isolated single gate driver with e-mode GaN transistor

下载数据摘要 Order Direct

产品概述

描述

The EVSTGAP2GS is a half bridge evaluation board designed to evaluate the STGAP2GS isolated single gate driver.

The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power conversion and motor driver inverters in industrial applications.

The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors.

The device integrates protection functions including thermal shutdown and UVLO with optimized level for enhancement-mode GaN transistors, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction.

The device allows implementing negative gate driving, and the on board isolated DC-DC converters allows working with optimized driving voltage for e-mode GaN transistors.

The EVSTGAP2GS board allows evaluation of all the STGAP2GS features driving the SGT120R65AL 75 mΩ, 650 V e-Mode GaN transistors.

The board components are easy to access and modify in order to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.

  • 所有功能

    • Board
      • Half bridge configuration, high voltage rail up to 650 V
      • SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
      • Negative gate driving
      • On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
      • VDD logic supplied by on-board 3.3 V or VAUX = 5 V
      • Easy jumper selection of driving voltage configuration: +6/0 V; +6/-3 V
    • Device
      • High voltage rail up to 1200 V
      • Driver current capability: 2 A / 3 A source/sink @ 25 °C, VH = 6 V
      • Separate sink and source for easy gate driving configuration
      • Input-output propagation delay: 45 ns
      • UVLO function optimized for GaN
      • Gate driving voltage up to 15 V
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shut down protection

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 WEEE Compliant 材料声明**
EVSTGAP2GS
批量生产
CARD 工业 Ecopack1 -

EVSTGAP2GS

Package:

CARD

Material Declaration**:

Marketing Status

批量生产

Package

CARD

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

Swipe or click the button to explore more details Don't show this again
产品型号
供货状态
Budgetary Price (US$)*/Qty
从ST订购
Order from distributors
包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
供应商
核心产品
EVSTGAP2GS
Available at distributors

经销商的可用性 EVSTGAP2GS

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

无法联系到经销商,请联系我们的销售办事处

EVSTGAP2GS 批量生产

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

EVSTGAP2GS

供应商:

ST

核心产品:

EVSTGAP2GS, SGT120R65AL

代理商名称

代理商库存报告日期:

Swipe or click the button to explore more details Don't show this again

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商