VD55H1

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低功耗、低噪音3D iToF 0.5 Mpix传感器晶片

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产品概述

描述

The VD55H1 is a low-noise, low-power, 672 x 804 pixel (0.54 Mpix), indirect Time-of-Flight (iToF) sensor die manufactured on advanced backside-illuminated, stacked wafer technology. Combined with a 940 nm illumination system, it enables building a small form-factor 3D camera producing a high-definition depth map with typical ranging distance up to 5 meters in full resolution, and beyond 5 meters with patterned illumination. With a unique ability to operate at 200 MHz modulation frequency and more than 85% demodulation contrast, the sensor can produce depth precision twice as good as typical 100 MHz modulated sensors, while multifrequency operation provides long distance ranging. The low-power 4.6 µm pixel enables state-of-the-art power consumption, with average sensor power down to 80 mW in some modes.

The VD55H1 outputs 12-bit RAW digital video data over a MIPI CSI-2 quad lane or dual lane interface clocked at 1.5 GHz. The sensor frame rate can reach 60 fps in full resolution and 120 fps in analog binning 2x2. ST has developed a proprietary software image signal processor (ISP) to convert RAW data into depth map, amplitude map, confidence map and offset map. Android formats like DEPTH16 and depth point cloud are also supported.

The device is fully configurable through the I2C serial interface. It features a 200 MHz low-voltage differential signaling (LVDS) and a 10 MHz, 3-wire SPI interface to control the laser driver with high flexibility. The sensor is optimized for low EMI/EMC, multidevice immunity, and easy calibration procedure.

The sensor die size is 4.5 x 4.9 mm and the product is delivered in the form of reconstructed wafers.

  • 所有功能

    • Ultra-compact 0.54 Mpix iToF sensor die
      • 672 x 804 indirect Time-of-Flight (iToF) sensor die (0.54 Mpixel)
      • 4.6 μm backside illuminated fast photodiode pixel, 1/4’’ optical format
      • 4.5 mm x 4.9 mm die manufactured on advanced 40 nm stacked wafer technology
    • Enabling low-power, high precision depth map
      • Pixel with >85% demodulation contrast at 200 MHz modulation frequency
      • Low noise charge domain pixel (kTC free) < 5e-
      • Multifrequency supported (up to three frequencies)
      • Average sensor power consumption down to 80 mW
      • Smart iToF modulation, no need for wiggling error calibration
      • Multi-user interferences reduction
      • Optimized for low EMI/EMC
    • Easy integration for 3D camera
      • Raw data output on MIPI CSI2 interface at 1.5 GHz (quad or dual lane)
      • 10/12-bit configurable ADC resolution
      • Sensor raw output up to 120 fps (depth-level frame rate)
      • Sensor control: Fast mode+ I2C slave interface (up to 1 MHz)
      • Laser driver interface: LVDS and 3-wire SPI
      • Software ISP for depth reconstruction available

EDA符号、封装和3D模型

STMicroelectronics - VD55H1

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质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
VD55H1CCA0/RW
预览
GOOD DIE 工业 N/A

VD55H1CCA0/RW

Package:

GOOD DIE

Material Declaration**:

PDF XML

Marketing Status

预览

Package

GOOD DIE

Grade

Industrial

RoHS Compliance Grade

N/A

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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产品型号
Order from distributors
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Operating Range Distance (m) (max)
Budgetary Price (US$)*/Qty
Package size (mm)
单价(US$)
Country of Origin
最小值
最大值
VD55H1CCA0/RW Available at distributors

经销商的可用性 VD55H1CCA0/RW

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

无法联系到经销商,请联系我们的销售办事处
预览
EAR99 NEC Tape Mounted GOOD DIE -30 55 -

4.5 x 4.9

-

FRANCE

VD55H1CCA0/RW 预览

封装:
GOOD DIE
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

产品型号:

VD55H1CCA0/RW

ECCN (EU):

NEC

包装类型:

Tape Mounted

Operating Temperature (°C)

Min:

-30

Max:

55

Operating Range Distance (m) (max):

-

Package size (mm):

4.5 x 4.9

Country of Origin:

FRANCE

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商