意法半导体的高压驱动器设计用于优化矢量电机驱动系统，在高开关频率下实现了出色的性能，并且具有智能关断功能以保护最终应用。
smartSTDRIVE MOSFET和MOSFET驱动器 整合了用于实现保护功能的比较器、用于电流感应的运算放大器和集成式阴极负载二极管，因此降低了整个系统的外部元件数量。
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MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
- MASTERGAN2 High power density 600V Half bridge driver with two enhancement mode GaN HEMT
- L6389E High voltage high and low-side driver
- MASTERGAN1 High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
- L6386AD HV High and low side driver with embedded comparator and bootstrap diode
- L6395 High voltage high and low-side driver
- L6399 High voltage high and low-side driver
- L6498 High voltage high and low-side 2 A gate driver
- L6388E HV high and low side driver with embedded bootstrap diode
- L6494 High voltage high and low-side 2 A gate driver
- L6387E High voltage high and low-side driver
- L6386E HV high and low side driver with embedded comparator and bootstrap diode
- L6385E HV high and low side driver with embedded bootstrap diode
- L6384E High voltage high and low side driver with bootstrap diode
- L6491 High voltage high and low-side 4 A gate driver
- L6391 High voltage high and low-side driver
- L6390 High voltage high/ low-side driver
- L6393 Half bridge gate driver
- L6392 High voltage high and low-side driver
- MASTERGAN4 High power density 600V half-bridge driver with two enhancement mode GaN HEMT
- A6387 High-voltage high and low side driver for automotive applications
- L6398 High voltage high and low-side driver
