意法半导体的高压驱动器设计用于优化矢量电机驱动系统，在高开关频率下实现了出色的性能，并且具有智能关断功能以保护最终应用。
smartSTDRIVE MOSFET和MOSFET驱动器 整合了用于实现保护功能的比较器、用于电流感应的运算放大器和集成式阴极负载二极管，因此降低了整个系统的外部元件数量。
精选 视频
MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
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MASTERGAN2
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
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L6389E
High voltage high and low-side driver
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MASTERGAN1
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
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L6386AD
HV High and low side driver with embedded comparator and bootstrap diode
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L6395
High voltage high and low-side driver
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L6399
High voltage high and low-side driver
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L6498
High voltage high and low-side 2 A gate driver
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L6388E
HV high and low side driver with embedded bootstrap diode
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L6494
High voltage high and low-side 2 A gate driver
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L6387E
High voltage high and low-side driver
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L6386E
HV high and low side driver with embedded comparator and bootstrap diode
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L6385E
HV high and low side driver with embedded bootstrap diode
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L6384E
High voltage high and low side driver with bootstrap diode
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L6491
High voltage high and low-side 4 A gate driver
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L6391
High voltage high and low-side driver
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L6390
High voltage high/ low-side driver
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L6393
Half bridge gate driver
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L6392
High voltage high and low-side driver
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MASTERGAN4
High power density 600V half bridge driver with two enhancement mode GaN power HEMT
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A6387
High-voltage high and low side driver for automotive applications
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L6398
High voltage high and low-side driver
