产品概述

描述

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half-bridge configurations. The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.
The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
The L6385E features the UVLO protection on both lower and upper driving sections (V_CCand V_BOOT), ensuring greater protection against voltage drops on the supply lines.
The device is available in a DIP-8 tube and SO-8 tube, and tape and reel packaging options.

所有功能
High voltage rail up to 600 V

dV/dt immunity ± 50 V/nsec in full temperature range

Driver current capability:

400 mA source

650 mA sink

Switching times 50/30 nsec rise/fall with 1 nF load

CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down

Undervoltage lockout on lower and upper driving section

Internal bootstrap diode

Outputs in phase with inputs
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