产品概述
描述
The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.
The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.
The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.
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所有功能
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/nsec in full temperature range
- Driver current capability
- 400 mA source
- 650 mA sink
- Switching times 50/30 nsec rise/fall with 1 nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Internal bootstrap diode
- Outputs in phase with inputs
- Interlocking function
电路原理图
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EDA符号、封装和3D模型
STMicroelectronics - L6387E
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| L6387ED | 批量生产 | SO-8 | 工业 | Ecopack2 | |
| L6387ED013TR | 批量生产 | SO-8 | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| L6387ED013TR | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | SO-8 | -40 | 125 | CHINA | | ||
| L6387ED | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | SO-8 | -40 | 125 | CHINA | | ||