产品概述
描述
The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.
The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.
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所有功能
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/ns over full temperature range
- Driver current capability:
- 290 mA source
- 430 mA sink
- Switching times 75/35 ns rise/fall with 1 nF load
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Integrated bootstrap diode
- Internal 320 ns deadtime
- Interlocking function
- Compact and simplified layout
- Bill of material reduction
- Flexible, easy and fast design
电路原理图
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EDA符号、封装和3D模型
STMicroelectronics - L6399
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| L6399D | 批量生产 | SO-8 | 工业 | Ecopack2 | |
| L6399DTR | 批量生产 | SO-8 | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| L6399D | | | distributors 无法联系到经销商，请联系我们的销售办事处 | SO-8 | Tube | CHINA | EAR99 | NEC | -40 | 125 | -40 | |||
| L6399DTR | | | distributors 无法联系到经销商，请联系我们的销售办事处 | SO-8 | Tape and Reel | CHINA | EAR99 | NEC | -40 | 125 | -40 | |||
L6399D 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
SO-8
包装类型:
Tube
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
L6399DTR 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
SO-8
包装类型:
Tape and Reel
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
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