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The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.
The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.
主要特性
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/ns over full temperature range
- Driver current capability:
- 290 mA source
- 430 mA sink
- Switching times 75/35 ns rise/fall with 1 nF load
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Integrated bootstrap diode
- Internal 320 ns deadtime
- Interlocking function
- Compact and simplified layout
- Bill of material reduction
- Flexible, easy and fast design
电路原理图
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| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| L6399D | 批量生产 | SO-8 | 工业 | Ecopack2 | |
| L6399DTR | 批量生产 | SO-8 | 工业 | Ecopack2 | |
L6399D
Package:
SO-8Material Declaration**:
L6399DTR
Package:
SO-8Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
