STDRIVEG600W

批量生产
Design Win

用于GaN晶体管的高压半桥栅极驱动器

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产品概述

描述

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

The STDRIVEG600W features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.

  • 所有功能

    • dV/dt immunity ±200 V/ns
    • Driver current capability:
      • 1.3/2.4 A source/sink typ @ 25 °C, 6 V
      • 5.5/6 A source/sink typ @ 25 °C, 15 V
    • Separated turn on and turn off gate driver pins
    • 45 ns propagation delay with tight matching
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Interlocking function
    • UVLO on low-side and high-side sections
    • Dedicated pin for shut down functionality
    • Over temperature protection

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EDA符号、封装和3D模型

STMicroelectronics - STDRIVEG600W

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STDRIVEG600W
批量生产
US WF V.I. 工业 N/A

STDRIVEG600W

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US WF V.I.

Material Declaration**:

Marketing Status

批量生产

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US WF V.I.

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Industrial

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N/A

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STDRIVEG600W
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STDRIVEG600W 批量生产

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商