产品概述
描述
The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
The STDRIVEG600W features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.
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所有功能
- dV/dt immunity ±200 V/ns
- Driver current capability:
- 1.3/2.4 A source/sink typ @ 25 °C, 6 V
- 5.5/6 A source/sink typ @ 25 °C, 15 V
- Separated turn on and turn off gate driver pins
- 45 ns propagation delay with tight matching
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Interlocking function
- UVLO on low-side and high-side sections
- Dedicated pin for shut down functionality
- Over temperature protection
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EDA符号、封装和3D模型
质量与可靠性
产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|
STDRIVEG600W | 批量生产 | US WF V.I. | 工业 | N/A | |
STDRIVEG600W
Package:
US WF V.I.Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | |||||||||||
STDRIVEG600W | 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | US WF V.I. | -40 | 150 | ITALY | |