Featuring the industry's best trade-off between static and dynamic characteristics, the 1200 V TFS IGBTs have an extended maximum operating junction temperature of 175 °C, high short-circuit withstand time and a wide safe operating area (SOA), making them extremely rugged and reliable. IGBTs belong to the STPOWER family.The bare die IGBTs are available in different trade-offs, with a maximum collector current up to 75A, for a wide range of applications like motor control, servo drives, welding and solar, and in different packing options, such as wafers on sticky foil or sealed die in tape & reel.The availability of KGD (known good die) testing equipment ensures a high degree of reliability and quality thanks to extensive testing and inspection.
Our wide STPOWER product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
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- STG35M120F3D7 1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D7 packing
- STG25M120F3D7 1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG40M120F3D7 Trench gate field-stop 1200 V, 40 A low loss M series IGBT die in D7 packing
- STG75M120F3D8 1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D8 packing
- STG35M120F3D8 1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D8 packing
- STG25H120F2D7 1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
- STG8M120F3D7 1200 V, 8 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG15M120F3D8 1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D8 packing
- STG15M120F3D7 1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG75M120F3D7 1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing