- STG25M120F3D7 1200 V、25 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG40M120F3D7 1200 V、40 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG15M120F3D7 1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG75M120F3D7 1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG25H120F2D7 1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
- STG50M120F3D7 Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
- STG8M120F3D7 1200 V、8 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG15M120F3D8 1200 V、15 A沟槽栅场截止M系列低损耗IGBT晶片，D8封装
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