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The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
主要特性
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
- VERY HIGH SWITCHING SPEED
- STMicroelectronics PREFERRED SALES TYPE
- HIGH VOLTAGE CAPABILITY
- NPN TRANSISTOR
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LOW SPREAD OF DYNAMIC PARAMETERS
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| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| BUL128D-B | 批量生产 | TO-220AB | 工业 | Ecopack2 | |
BUL128D-B
Package:
TO-220ABMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
