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The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.主要特性
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
- LOW SPREAD OF DYNAMIC PARAMETERS
- HIGH VOLTAGE CAPABILITY
- VERY HIGH SWITCHING SPEED
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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