意法半导体提供齐全的IGBT(绝缘栅双极晶体管)产品组合,电压范围从300 V至1700 V,采用平面穿通 (PT) 和沟槽式场截止 (TFS) 技术。IGBT属于STPOWER系列。

意法半导体的IGBT在开关性能和导通状态行为(变体)之间实现了最佳均衡,适用于工业汽车领域的应用,如通用逆变器、电机控制、家用电器、HVAC、UPS/SMPS、焊接设备、感应加热、太阳能逆变器、牵引逆变器、车载充电器 & 快速充电器。 




  • 实现了传导和关断能量损耗之间的最佳平衡
  • 最高结温达175 °C
  • 宽的开关频率范围
  • 组合封装反向并联二极管选项改善了功率耗散,实现了最佳散热管理


1200 V IGBT S series

Optimized for use in low-frequency (up to 8 kHz), hard-switching topologies, ST’s S series of 1200 V IGBTs feature the industry’s lowest V CE(sat) among 1200 V IGBTs currently on the market. Based on ST’s third-generation of trench-gate field-stop technology, they increase the efficiency of power supplies, welders and industrial motor drive applications thanks to the optimal trade-off between conduction and switching performance combined with outstanding robustness and EMI characteristics. Available in 15 A, 25 A and 40 A current ratings, they feature a 175°C maximum operating junction temperature, a 10 µs min short-circuit withstand time and a wide safe operating area (SOA).