意法半导体提供齐全的IGBT（绝缘栅双极晶体管）产品组合，电压范围从300 V至1700 V，采用平面穿通 (PT) 和沟槽式场截止 (TFS) 技术。IGBT属于STPOWER系列。
意法半导体的IGBT在开关性能和导通状态行为（变体）之间实现了最佳均衡，适用于工业和汽车领域的应用，如通用逆变器、电机控制、家用电器、HVAC、UPS/SMPS、焊接设备、感应加热、太阳能逆变器、牵引逆变器、车载充电器 & 快速充电器。
我们的IGBT可以提供裸露晶片和封装为分立元件等形式。
STPOWER IGBT主要特征：
- 实现了传导和关断能量损耗之间的最佳平衡
- 最高结温达175 °C
- 宽的开关频率范围
- 组合封装反向并联二极管选项改善了功率耗散，实现了最佳散热管理
我们种类繁多的STPOWER产品组合采用非常先进的封装和防护，提供高可靠性和安全性，帮助设计人员为客制化的高效应用（将具有很长的使用寿命）找到合适的解决方案。
精选 视频
STMicroelectronics presents ACEPACK SMIT: a surface-mount power module with top-side cooling, which ensures higher power density and improved thermal management for very efficient and more compact systems.
特别推荐
1200 V IGBT S series
Optimized for use in low-frequency (up to 8 kHz), hard-switching topologies, ST’s S series of 1200 V IGBTs feature the industry’s lowest V CE(sat) among 1200 V IGBTs currently on the market. Based on ST’s third-generation of trench-gate field-stop technology, they increase the efficiency of power supplies, welders and industrial motor drive applications thanks to the optimal trade-off between conduction and switching performance combined with outstanding robustness and EMI characteristics. Available in 15 A, 25 A and 40 A current ratings, they feature a 175°C maximum operating junction temperature, a 10 µs min short-circuit withstand time and a wide safe operating area (SOA).
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