The MDmesh™ DM6 super-junction power MOSFETs are ST's latest fast-recovery diode MOSFET series, optimized for full-bridge phase-shifted ZVS topologies.
These 600 and 650 V fast-recovery MOSFETs feature a very low recovery charge and time (Qrr, trr) and deliver up to 15% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (100 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines. These power MOSFETs belong to the STPOWER family.
STPOWER MOSFET key features and benefits
- Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
- Higher dV/dt and di/dt capability for improved system reliability and robustness
- AEC-Q101-qualified 600 V and 650 V fast-recovery MOSFETs for automotive applications
With a breakdown voltage ranging of 600 and 650 V, MDmesh™ DM6 power MOSFETs are available in a wide range of package options both through-hole (TO247, TO247 long leads and 4-lead TO247) and SMD package solutions including D2PAK, 7-lead H2PAK and the new HU3PAK package.
The new breakthrough Top Side Cooling HU3PAK solution allowing higher power density and improved thermal management enables more compact and very efficient systems. The features of this new package makes it ideal for both industrial and automotive applications. The first STPOWER MOSFETs housed in HU3PAK and introduced in the market are the AEC-Q101-qualified 600V STHU36N60DM6AG and STHU47N60DM6AG and 650V STHU32N65DM6AG ideal for OBC and DC-DC converters in Electric Vehicle applications.
Our STPOWER MOSFET finder mobile app helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.